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| ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Current (pulse) 1) TO-126 Plastic Package Symbol VCBO VCEO VEBO IC(DC) IB(DC) IC(pulse) Ptot Ptot Tj TS Value 60 60 7 5 1 8 1.3 20 150 -55 to +150 Unit V V V A A A W W O Total power dissipation (Ta = 25 OC) Total power dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range PW10ms, duty cycle50%. Characteristics at Ta = 25 OC 1) C C O Parameter DC Current Gain at VCE = 1 V, IC = 2 A Current Gain Group M L K at VCE = 1 V, IC = 0.1 A at VCE = 1 V, IC = 5 A Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 7 V Base Saturation Voltage at IC = 2 A, IB = 0.2 A Collector Saturation Voltage at IC = 2 A, IB = 0.2 A Turn-on time Storage time Fall time at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 , VCC = 10 V Symbol Min. Max. Unit hFE hFE hFE hFE hFE ICBO IEBO VBE(sat) VCE(sat) Ton Tstg tf 100 160 200 60 50 - 200 320 400 10 10 1.2 0.3 1 2.5 1 A A V V s s s SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006 |
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